QPD1010中文资料DC - 4 GHz, 10 Watt, 50 V GaN RF Transistor数据手册Qorvo规格书

描述 Description

Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.

特性 Features

• Frequency range: DC - 4 GHz
• Output power (P3dB): 11 W at 2 GHz
• Linear gain: 24.7 dB typical at 2 GHz
• Typical PAE3dB: 70% at 2 GHz
• Operating voltage: 50V
• Low thermal resistance package
• CW and pulse capable
• 3 x 3 mm package

应用 Application

• Civilian Radar
• Jammers
• Land Mobile Radio Communications
• Military Radar
• Military Radio
• Narrowband Amplifiers
• Test Instrumentation
• Wideband Amplifiers