10W, 50V, DC ??4 GHz, GaN RF Transistor

Product Features Frequency: DC to 4 GHz Output Power (P3dB): 11 W1 Linear Gain: 24.7 dB1 Typical DEFF3dB: 711 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable 3 x 3 mm package Note 1: @ 2 GHz (Loadpull)

文件：2.10935 Mbytes 页数：25 Pages

QORVO

威讯联合

DC - 4 GHz, 10 Watt, 50 V GaN RF Transistor

Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can po • Frequency range: DC - 4 GHz\n• Output power (P3dB): 11 W at 2 GHz\n• Linear gain: 24.7 dB typical at 2 GHz\n• Typical PAE3dB: 70% at 2 GHz\n• Operating voltage: 50V\n• Low thermal resistance package\n• CW and pulse capable\n• 3 x 3 mm package;

Qorvo

威讯联合

10W, 50V, DC ??4 GHz, GaN RF Transistor

Product Features Frequency: DC to 4 GHz Output Power (P3dB): 11 W1 Linear Gain: 24.7 dB1 Typical DEFF3dB: 711 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable 3 x 3 mm package Note 1: @ 2 GHz (Loadpull)

文件：2.10935 Mbytes 页数：25 Pages

QORVO

威讯联合

10W, 50V, DC ??4 GHz, GaN RF Transistor

Product Features Frequency: DC to 4 GHz Output Power (P3dB): 11 W1 Linear Gain: 24.7 dB1 Typical DEFF3dB: 711 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable 3 x 3 mm package Note 1: @ 2 GHz (Loadpull)

文件：2.10935 Mbytes 页数：25 Pages

QORVO

威讯联合