750 W, 65 V, 1.2 ??1.4 GHz, GaN RF Input-Matched Transistor

Key Features Frequency Range: 1.2 to 1.4 GHz Linear Gain1: 19.8 dB Output Power (P3dB)1: 838.5 W Drain Efficiency (P3dB)1: 67.3 Operating Voltage: 65 V CW and Pulse capable

文件：1.75047 Mbytes 页数：16 Pages

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750 W, 65 V, 1.2 ??1.4 GHz, GaN RF Input-Matched Transistor

Key Features Frequency Range: 1.2 to 1.4 GHz Linear Gain1: 19.8 dB Output Power (P3dB)1: 838.5 W Drain Efficiency (P3dB)1: 67.3 Operating Voltage: 65 V CW and Pulse capable

文件：1.75047 Mbytes 页数：16 Pages

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1.2 - 1.4 GHz 750 Watt 65 Volt GaN Input-Matched Transistor

The QPD1028L is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.Input pre-match within the package results in ease of external board match and saves board space. The • Operating Frequency Range: 1.2 - 1.4 GHz\n• Saturated Output Power PSAT: 59dBm\n• Drain Efficiency at PSAT: 70%\n• Large Signal Gain at PSAT: 18 dB\n• Bias: VDS=+65V, IDQ=750mA\n• Package Type: NI-780\n• Package Dimensions: 20.57 x 9.78 x 3.63 mm;

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Dual-Use GPS L1/L2 Dual Filter

Key Features • Usable Bandwidth 24 MHz • Low Insertion Loss:

文件：608.61 Kbytes 页数：11 Pages

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Dual-Use GPS L1/L2 Dual Filter

Key Features • Usable Bandwidth 24 MHz • Low Insertion Loss:

文件：608.61 Kbytes 页数：11 Pages

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Dual-Use GPS L1/L2 Dual Filter

Key Features • Usable Bandwidth 24 MHz • Low Insertion Loss:

文件：608.61 Kbytes 页数：11 Pages

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