40 W, 50 V, DC – 6 GHz, GaN RF Power Transistor

Product Overview The QPD1035L is a 40W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz on a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier application for pulsed and CW operations. Key Features • Operating Frequency Range

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QORVO

威讯联合

DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor

The QPD1035L is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant.\nGain, P3dB, and Drain Efficiency val • Frequency range: DC - 6 GHz\n• Drain Voltage: 50 V\n• Output Power (P3dB): 50 W\n• Drain Efficiency (P3dB): 52.2%\n• Linear Gain: 15.1dB\n• Low thermal resistance package;

Qorvo

威讯联合

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SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

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Teccor