QPD1035L中文资料DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor数据手册Qorvo规格书

描述 Description

The QPD1035L is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant.
Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz.

特性 Features

• Frequency range: DC - 6 GHz
• Drain Voltage: 50 V
• Output Power (P3dB): 50 W
• Drain Efficiency (P3dB): 52.2%
• Linear Gain: 15.1dB
• Low thermal resistance package

应用 Application

• Radar
• Communications
• Jammers