GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.

文件：29.71 Kbytes 页数：1 Pages

PERKINELMER

17.0-26.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure

文件：1.5436 Mbytes 页数：7 Pages

MIMIX

17.0-26.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure

文件：466.12 Kbytes 页数：7 Pages

MIMIX

4W YD1013B

Overview and characteristics The YD1013B is a 4W audio power amplifier with DC volume control for use in color televisions and recorders. Its main features are: • Volume control through the PIN7 pin DC potential to achieve, 2V ~ 6.5V 80dB range can be adjusted. • Operating voltage rang

文件：151.27 Kbytes 页数：3 Pages

YOUDA

友达电子