65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

文件：2.04642 Mbytes 页数：27 Pages

QORVO

威讯联合

65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

文件：2.04642 Mbytes 页数：27 Pages

QORVO

威讯联合

65W, 50V, DC ??3.7 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.7 GHz Output Power (P3dB)1: 70 W Linear Gain1: 20 dB Typical PAE3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

文件：2.04642 Mbytes 页数：27 Pages

QORVO

威讯联合

DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor

Qorvo's QPD1015L is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionic • Frequency range: DC - 3.7GHz\n• Linear gain: 20 dB typical at 2 GHz\n• Operating voltage: 50V\n• Low thermal resistance package\n;

Qorvo

威讯联合