1500 W, 65 V, 1.2??1.4GHz, GaN RF Input-Matched Transistor

文件：1.37507 Mbytes 页数：16 Pages

QORVO

威讯联合

1500 W, 65 V, 1.2??1.4GHz, GaN RF Input-Matched Transistor

文件：1.37507 Mbytes 页数：16 Pages

QORVO

威讯联合

1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor

The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and tes • Frequency Range: 1.2 - 1.4 GHz\n• Output Power (P3dB): 1500 W at 1.3 GHz\n• Linear Gain: 21.3 dB typical at 1.3 GHz\n• Typical PAE3dB: 75 % at 1.3 GHz\n• Operating voltage: 65 V\n• Low thermal resistance package\n• CW and Pulse capable;

Qorvo

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Evaluation Board - QPD1029L

Evaluation Board - QPD1029L

Richardson