QPD1020

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020EVB01

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020EVB01

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020S2

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020S2

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020SQ

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020SQ

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020SR

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020SR

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

1020

ADSLMAGNETICS

1020

Cushion-Mount??PlusPlateMountingTapes

1020M

Cushion-Mount??PlusPlateMountingTapes

1020R

Cushion-Mount??PlusPlateMountingTapes

A1020

PNPPlastic-EncapsulatedTransistor

FEATURES ●Poweramplifierapplications

A1020

HighlyPredictablePerformancewith100AutomaticPlacementandRouting

A1020

5Vand3.3VFamiliesfullycompatiblewithJEDECspecifications

A1020

SiliconPNPEpitaxialTransistor

Description: TheA1020isdesignedforuseinpoweramplifierapplicationsandpowerswitchingapplications Features: ●Lowcollectorsaturationvoltage ●ComplementarytoC2328

A1020B

ACT1SeriesFPGAs

Description TheACT™1Seriesoffieldprogrammablegatearrays(FPGAs)offersavarietyofpackage,speed,andapplicationcombinations.Devicesareimplementedinsilicongate,1-microntwo-levelmetalCMOS,andtheyemployActel’sPLICE®antifusetechnology.Theuniquearchitectureoffersg

A1020B

5Vand3.3VFamiliesfullycompatiblewithJEDECspecifications