N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications.

文件：279.83 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS SiliconMAX standard level FET

General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■

文件：219.37 Kbytes 页数：13 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.35 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：717.24 Kbytes 页数：13 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications.

文件：279.83 Kbytes 页数：13 Pages

PHI

飞利浦

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

Key applications } Synchronous buck regulators } DC-DC conversion } Voltage regulator modules (VRM) } Power OR-ing

文件：1.78504 Mbytes 页数：8 Pages

恩XP

N-channel logic level TrenchMOS transistor

文件：111.27 Kbytes 页数：9 Pages

PHI

飞利浦

N-channel logic level TrenchMOS transistor

文件：111.27 Kbytes 页数：9 Pages

PHI

飞利浦

Silicon MAX N-channel logic level TrenchMOS™ transistor

VDSS = 25 V\nID = 75 A\nRDS(ON) ≤ 4.3 mΩ (VGS = 10 V)\nRDS(ON) ≤ 5 mΩ (VGS = 5 V)GENERAL DESCRIPTION\nSiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.Applications:-\n• d.c. to d.c. converters\n• sw • ’Trench’ technology\n• Very low on-state resistance\n• Fast switching\n• Low thermal resistance;

恩XP