PSMN004-60P

N-channel enhancement mode field-effect transistor

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Features ■Lowon-stateresistance ■Fastswitching. Applications ■HighfrequencycomputermotherboardDCtoDCconverters ■OR-ingapplications.

PHI

PSMN004-60P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PSMN004-60P

N-channel enhancement mode field-effect transistor;

恩XP

PSMN004-60P.

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

Keyapplications }Synchronousbuckregulators }DC-DCconversion }Voltageregulatormodules(VRM) }PowerOR-ing

ETC

PSMN004-60B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PSMN004-60B

N-channelTrenchMOSSiliconMAXstandardlevelFET

1.1Generaldescription SiliconMAXstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)in aplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandb

PSMN004-60B

N-channelenhancementmodefield-effecttransistor

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Features ■Lowon-stateresistance ■Fastswitching. Applications ■HighfrequencycomputermotherboardDCtoDCconverters ■OR-ingapplications.

PHI