N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAXproducts use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

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PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

N-channel TrenchMOS transistor

文件：86.17 Kbytes 页数：7 Pages

PHI

飞利浦

N-channel TrenchMOS™ transistor

GENERAL DESCRIPTION\nSiliconMAXproducts use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.FEATURES\n• ’Trench’ technology\n• Very low on-state resistance\n• Fast switching\n• Low thermal resistanceApplications:-\n• d.c. • ’Trench’ technology\n• Fast switching\n• d.c. to d.c. converters\n• switched mode power supplies;

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