N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

文件：102.98 Kbytes 页数：9 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.12 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：712.62 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel TrenchMOS transistor

文件：146.19 Kbytes 页数：9 Pages

PHI

飞利浦

N-Channel 100-V (D-S) MOSFET

文件：949.09 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel TrenchMOS SiliconMAX standard level FET

文件：217.01 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS SiliconMAX standard level FET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Low conduction losses due to low on-state resistance\n• Rated for avalanche ruggedness;

Nexperia

安世