PSMN009-100P

N-channel enhancement mode field-effect transistor

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Features ■Lowon-stateresistance ■Fastswitching. Applications ■HighfrequencycomputermotherboardDCtoDCconverters ■OR-ingapplications.

PSMN009-100P

N-channel TrenchMOS SiliconMAX standard level FET

1.1Generaldescription SiliconMAXstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)in aplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandb

PSMN009-100P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.8mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PSMN009-100W

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PSMN009-100W

TrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. FEATURES •’Trench’technology •

PSMN009-100W

N-channelTrenchMOStransistor