N-channel logic level TrenchMOS transistor

VDSS = 25 V ID = 75 A RDS(ON) ≤ 4.3 mΩ (VGS = 10 V) RDS(ON) ≤ 5 mΩ (VGS = 5 V) GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:- • d.c. to d.c. converters

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PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

N-channel logic level TrenchMOS transistor

文件：111.27 Kbytes 页数：9 Pages

PHI

飞利浦

Silicon MAX N-channel logic level TrenchMOS™ transistor

VDSS = 25 V\nID = 75 A\nRDS(ON) ≤ 4.3 mΩ (VGS = 10 V)\nRDS(ON) ≤ 5 mΩ (VGS = 5 V)GENERAL DESCRIPTION\nSiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.Applications:-\n• d.c. to d.c. converters\n• sw • ’Trench’ technology\n• Very low on-state resistance\n• Fast switching\n• Low thermal resistance;

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