PSMN004-25P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PSMN004-25P

Silicon MAX N-channel logic level TrenchMOS™ transistor; • ’Trench’ technology\n• Very low on-state resistance\n• Fast switching\n• Low thermal resistance;

VDSS = 25 V\nID = 75 A\nRDS(ON) ≤ 4.3 mΩ (VGS = 10 V)\nRDS(ON) ≤ 5 mΩ (VGS = 5 V)GENERAL DESCRIPTION\nSiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.Applications:-\n• d.c. to d.c. converters\n• switched mode power supplies\n  The PSMN004-25P is supplied in the SOT78 (TO220AB) conventional leaded package.\n  The PSMN004-25B is supplied in the SOT404 surface mounting package.FEATURES\n• ’Trench’ technology\n• Very low on-state resistance\n• Fast switching\n• Low thermal resistance

恩XP

PSMN004-25P

N-channel logic level TrenchMOS transistor

VDSS=25V ID=75A RDS(ON)≤4.3mΩ(VGS=10V) RDS(ON)≤5mΩ(VGS=5V) GENERALDESCRIPTION SiliconMAXproductsusethelatestPhilipsTrenchtechnologytoachievethelowestpossibleon-stateresistanceineachpackageateachvoltagerating. Applications:- •d.c.tod.c.converters

PHI

PSMN004-25P

N-channel logic level TrenchMOS transistor

PHI

PSMN004-25B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PSMN004-25B

N-channellogiclevelTrenchMOStransistor

PHI

PSMN004-25B

N-channellogiclevelTrenchMOStransistor

VDSS=25V ID=75A RDS(ON)≤4.3mΩ(VGS=10V) RDS(ON)≤5mΩ(VGS=5V) GENERALDESCRIPTION SiliconMAXproductsusethelatestPhilipsTrenchtechnologytoachievethelowestpossibleon-stateresistanceineachpackageateachvoltagerating. Applications:- •d.c.tod.c.converters

PHI