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PSMN012-100YS

N-channel 100V 12mΩ standard level MOSFET in LFPAK

1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

文件:871.65 Kbytes 页数:15 Pages

NEXPERIA

安世

PSMN012-100YS

N-channel 100V 12m廓 standard level MOSFET in LFPAK

文件:242.19 Kbytes 页数:15 Pages

恩XP

恩XP

PSMN012-100YSF

丝印:12FS10Y;Package:SOT669;NextPower 100 V, 11.8 mOhm N-channel MOSFET in LFPAK56 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • Low QG × RDSon FOM for high efficiency switching applications •

文件:335.78 Kbytes 页数:14 Pages

NEXPERIA

安世

PSMN012-100YSFX

NextPower 100 V, 11.8 mOhm N-channel MOSFET in LFPAK56 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • Low QG × RDSon FOM for high efficiency switching applications •

文件:335.78 Kbytes 页数:14 Pages

NEXPERIA

安世

PSMN012-100YS_15

N-channel 100V 12m廓 standard level MOSFET in LFPAK

文件:242.19 Kbytes 页数:15 Pages

PHI

飞利浦

PHI

PSMN012-100YS

N-channel 100V 12mΩ standard level MOSFET in LFPAK

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • Advanced TrenchMOS provides low RDSon and low gate charge\n• High efficiency gains in switching power converters\n• Improved mechanical and thermal characteristics\n• LFPAK provides maximum power density in a Power SO8 package;

Nexperia

安世

PSMN012-100YSF

NextPower 100 V, 11.2 mOhm N-channel MOSFET in LFPAK56 package

NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.\n • Low Qrr for higher efficiency and lower spiking\n• Strong avalanche energy rating (EAS)\n• Ha-free and RoHS compliant LFPAK56 package\n• Wave-solderable LFPAK56 package\n;

Nexperia

安世

技术参数

  • Package name:

    LFPAK56; Power-SO8

  • Product status:

    Production

  • Channel type:

    N

  • Nr of transistors:

    1

  • VDS [max] (V):

    100

  • RDSon [max] @ VGS = 10 V (mΩ):

    12

  • Tj [max] (°C):

    175

  • ID [max] (A):

    60

  • QGD [typ] (nC):

    19

  • QG(tot) [typ] @ VGS = 10 V (nC):

    51

  • Ptot [max] (W):

    130

  • Qr [typ] (nC):

    129

  • VGSth [typ] (V):

    3

  • Automotive qualified:

    N

  • Ciss [typ] (pF):

    3500

  • Coss [typ] (pF):

    246

  • Release date:

    2011-02-10

供应商型号品牌批号封装库存备注价格
NEXPERIA
24+
SOT-669
6524
原装正品,现货库存,1小时内发货
询价
恩XP
25+
SOT-669
32360
NXP/恩智浦全新特价PSMN012-100YS即刻询购立享优惠#长期有货
询价
NEXPERIA B.V.
25+
SMD
918000
明嘉莱只做原装正品现货
询价
ON
23+
SOT-669
10000
全新、原装
询价
恩XP
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
恩XP
2025+
SOT-669
2415
原装进口价格优 请找坤融电子!
询价
恩XP
16+
NA
8800
诚信经营
询价
恩XP
24+
SMD
1
NXP一级代理商原装进口现货,假一赔十
询价
恩XP
25+23+
SOT-669
19308
绝对原装正品全新进口深圳现货
询价
恩XP
24+
SOT-669
9860
一级代理/全新现货/长期供应!
询价
更多PSMN012-100YS供应商 更新时间2025-12-1 15:03:00