丝印：12FS10Y；Package：SOT669；NextPower 100 V, 11.8 mOhm N-channel MOSFET in LFPAK56 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • Low QG × RDSon FOM for high efficiency switching applications •

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NextPower 100 V, 11.8 mOhm N-channel MOSFET in LFPAK56 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • Low QG × RDSon FOM for high efficiency switching applications •

文件：335.78 Kbytes 页数：14 Pages

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NextPower 100 V, 11.2 mOhm N-channel MOSFET in LFPAK56 package

NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.\n • Low Qrr for higher efficiency and lower spiking\n• Strong avalanche energy rating (EAS)\n• Ha-free and RoHS compliant LFPAK56 package\n• Wave-solderable LFPAK56 package\n;

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N-channel 100 V, 12 m廓 logic level MOSFET in LFPAK56

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N-channel 100V 12mΩ standard level MOSFET in LFPAK

1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

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