N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications.

文件：271.41 Kbytes 页数：13 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.67 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：690.68 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel TrenchMOS SiliconMAX standard level FET

文件：189.19 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS SiliconMAX standard level FET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Low conduction losses due to low on-state resistance\n• Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世