N-channel logic level TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAXproducts use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Logic level compatible Applications:-

文件：99.62 Kbytes 页数：9 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel logic level TrenchMOS transistor

文件：142.25 Kbytes 页数：9 Pages

PHI

飞利浦

N-channel logic level TrenchMOS transistor

恩XP

恩智浦