20.32mm (0.8INCH) 16 SEGMENT SINGLE DIGIT ALPHANUMERIC DISPLAY

Description The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium P

文件：150.72 Kbytes 页数：4 Pages

KINGBRIGHT

今台电子

20.32mm (0.8INCH) 16 SEGMENT SINGLE DIGIT ALPHANUMERIC DISPLAY

Description The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium P

文件：152.25 Kbytes 页数：4 Pages

KINGBRIGHT

今台电子

General-Purpose and Sensor Power Supplies

Product Description The PSC Compact series operates with universal AC input range and offers full power up to 55 °C. The output is adjustable from 24 to 28 volts and can support up to 3000 microfarads of load capacitance. All models in the series are certified according to IEC/EN/UL 609

文件：206.66 Kbytes 页数：6 Pages

EATON

伊顿

650 V, 10 A SiC Schottky diode in bare die

General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capaci

文件：202.85 Kbytes 页数：9 Pages

NEXPERIA

安世

650 V, 10 A SiC Schottky diode in bare die for automotive applications

General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capaci

文件：234.59 Kbytes 页数：9 Pages

NEXPERIA

安世

650 V, 10 A SiC Schottky diode in DPAK R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic pa

文件：177.2 Kbytes 页数：7 Pages

NEXPERIA

安世

650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications

General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package of

文件：262.95 Kbytes 页数：11 Pages

NEXPERIA

安世

650 V, 10 A SiC Schottky diode in D2PAK R2P

1. General description Nexperia introduces leading edge Silicon Carbide Schottky (SiC) diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic p

文件：180.12 Kbytes 页数：7 Pages

NEXPERIA

安世

丝印：PSC1065K；Package：TO-220-2；650 V, 10 A SiC Schottky diode in TO-220-2 R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. T

文件：211.61 Kbytes 页数：10 Pages

NEXPERIA

安世

650 V, 10 A SiC Schottky diode in TO-247-2

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a 2-pin TO-247-2 through-hole power plastic package offers temperature indepen

文件：148.85 Kbytes 页数：6 Pages

NEXPERIA

安世