650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications

General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package of

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650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independ

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650 V, 10 A SiC Schottky diode in D2PAK R2P

1. General description Nexperia introduces leading edge Silicon Carbide Schottky (SiC) diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic p

文件：180.12 Kbytes 页数：7 Pages

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650 V, 10 A SiC Schottky diode in TO-220-2 R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. T

文件：211.61 Kbytes 页数：10 Pages

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650 V, 10 A SiC Schottky diode in TO-247-2

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a 2-pin TO-247-2 through-hole power plastic package offers temperature indepen

文件：148.85 Kbytes 页数：6 Pages

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