丝印：PSC1065K；Package：TO-220-2；650 V, 10 A SiC Schottky diode in TO-220-2 R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. T

文件：211.61 Kbytes 页数：10 Pages

NEXPERIA

安世

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a 2-pin TO-220-2 through-hole power plastic package offers temperature independent capacitive turn-off, ze • Zero forward and reverse recovery\n• Temperature independent fast and smooth switching performance\n• Outstanding figure-of-merit (Qc x VF)\n• High IFSM capability\n• High power density\n• Reduced system cost\n• System miniaturization\n• Reduced EMI;

Nexperia

安世

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR

Versatile telephone transmission circuit with dialler interface

文件：154.29 Kbytes 页数：28 Pages

PHI

PHI