650 V, 10 A SiC Schottky diode in D2PAK R2P

1. General description Nexperia introduces leading edge Silicon Carbide Schottky (SiC) diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic p

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NEXPERIA

安世

Nexperia introduces leading edge Silicon Carbide Schottky (SiC) diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature in • Zero forward and reverse recovery\n• Outstanding figure-of-merit (Qc x VF)\n• High power density\n• System miniaturization\n• Reduced EMI;

Nexperia

安世

650 V, 10 A SiC Schottky diode in TO-220-2 R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. T

文件：211.61 Kbytes 页数：10 Pages

NEXPERIA

安世

650 V, 10 A SiC Schottky diode in TO-247-2

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a 2-pin TO-247-2 through-hole power plastic package offers temperature indepen

文件：148.85 Kbytes 页数：6 Pages

NEXPERIA

安世

1616.0 - 1626.5 MHz Iridium Band Pass SAW Filter

Product Features • Frequency: 1616.0 - 1626.5 MHz • No matching required for operation at 50Ω • High Rejection • Laminate with Over Mold Surface Mount Package (SMP) • Small Size: 1.4 x 1.2 x 0.84mm

文件：557.1 Kbytes 页数：7 Pages

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