PSC1065H-Q中文资料安世数据手册PDF规格书

厂商型号	PSC1065H-Q
功能描述	650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications
文件大小	262.95 Kbytes
页面数量	11 页
生产厂商	NEXPERIA
中文名称	安世
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-12-10 23:01:00
人工找货	PSC1065H-Q价格和库存，欢迎联系客服免费人工找货

General description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance,

low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated

in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers

temperature independent capacitive turn-off, zero recovery switching behavior combined with

an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the

robustness expressed in a high IFSM.

Features and benefits

• Reduced system costs

• Temperature independent fast and smooth switching performance

• Outstanding figure-of-merit (Qc

x VF)

• High IFSM capability

• High power density

• System miniaturization

• Reduced EMI

• Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

• Traction inverter

• DC-DC converter

• Onboard charger