Spiral Chip Inductor

文件：129.63 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世科技

SMB Connector

文件：199.69 Kbytes 页数：3 Pages

DDK

6 to 12 A Switching Regulators

文件：213.87 Kbytes 页数：3 Pages

POWER-ONE

丝印：PSC0665H；Package：DPAK；650 V, 6 A SiC Schottky diode in DPAK R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic pa

文件：255.9 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：PSC0665K；Package：TO-220-2；650 V, 6 A SiC Schottky diode in TO-220-2 R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. The product

文件：233.91 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：PSC1065K；Package：TO-220-2；650 V, 10 A SiC Schottky diode in TO-220-2 R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. T

文件：211.61 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：PSC2065J；650 V, 20 A SiC Schottky diode in D2PAK R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic p

文件：281.47 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

12.7mm(0.5inch) 16 SEGMENT SINGLE DIGIT ALPHANUMERIC DISPLAYS

Description The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color devices are made with Ga

文件：158.75 Kbytes 页数：5 Pages

Kingbright

今台电子

12.7mm (0.5INCH)16 SEGMENT SINGLE DIGIT ALPHANUMERIC DISPLAY

Description The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color devices are made with Ga

文件：153.47 Kbytes 页数：4 Pages

Kingbright

今台电子

12.7mm (0.5INCH)16 SEGMENT SINGLE DIGIT ALPHANUMERIC DISPLAY

Description The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color devices are made with Ga

文件：153.04 Kbytes 页数：4 Pages

Kingbright

今台电子