650 V, 10 A SiC Schottky diode in DPAK R2P

1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic pa

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650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications

General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package of

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NEXPERIA

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Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature ind • Zero forward and reverse recovery\n• Temperature independent fast and smooth switching performance\n• Outstanding figure-of-merit (Qc x VF)\n• High IFSM capability\n• High power density\n• Reduced system cost\n• System miniaturization\n• Reduced EMI;

Nexperia

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650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independ

Nexperia

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