PSC1065H数据手册Nexperia中文资料规格书

描述 Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.

特性 Features

• Zero forward and reverse recovery
• Temperature independent fast and smooth switching performance
• Outstanding figure-of-merit (Qc x VF)
• High IFSM capability
• High power density
• Reduced system cost
• System miniaturization
• Reduced EMI

应用 Application

• Switch Mode Power Supply (SMPS)
• AC-DC and DC-DC converter
• Battery charging infrastructure
• Server and telecom power supply
• Uninterruptible Power Supply (UPS)
• Photovoltaic inverters