N-channel field-effect transistors

DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

文件：96 Kbytes 页数：10 Pages

PHI

飞利浦

DC-2400 MHz 3.5V SiGe Amplifier

Product Description Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 65

文件：219.6 Kbytes 页数：7 Pages

STANFORD

DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier

Product Description The SGA-5486 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of

文件：89.33 Kbytes 页数：4 Pages

SIRENZA

DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

文件：375.54 Kbytes 页数：6 Pages

RFMD

威讯联合