N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio amplifiers. FEATURES • High-speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltag

文件：36.29 Kbytes 页数：6 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N沟道FET

SOT23封装对称N沟道结型场效应晶体管。 高速切换\n可互换的漏极和源极连接\n低开态阻值;

恩XP

三极管

Nexperia

安世