NPN switching transistors

General description NPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High current (max. 600 mA) ■ Low voltage (max. 40 V) Applications ■ Switching and linear amplification

文件：152.12 Kbytes 页数：8 Pages

恩XP

丝印：1B；Package：SOT23；NPN switching transistor

1. General description NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 30 V) • AEC-Q101 qualified 3. Applications • Switching and linear amplification

文件：216.85 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN switching transistors

DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complements: PMBT2907 and PMBT2907A. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification.

文件：46.33 Kbytes 页数：8 Pages

PHI

飞利浦

NPN switching transistors

NPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • High current (max. 600 mA)\n• Low voltage (max. 40 V)\n• AEC-Q101 qualified;

Nexperia

安世

NPN switching transistors

DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complements: PMBT2907 and PMBT2907A. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification.

文件：46.33 Kbytes 页数：8 Pages

PHI

飞利浦

NPN switching transistors

General description NPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High current (max. 600 mA) ■ Low voltage (max. 40 V) Applications ■ Switching and linear amplification

文件：152.12 Kbytes 页数：8 Pages

恩XP

丝印：1P；Package：SOT23；NPN switching transistor

1. General description NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 40 V) • AEC-Q101 qualified 3. Applications • Switching and linear amplification

文件：213.57 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：M3；Package：DFN1006-3；40 V, 600 mA NPN switching transistor

1. General description NPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT2907AM 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 40V) • Leadless ultra small SMD plastic package

文件：219.91 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：01100111；Package：DFN1006B-3；40 V, 600 mA NPN switching transistor

1. General description NPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT2907AMB 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 40V) • Leadless ultra small SMD plastic packa

文件：221.72 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：X100；Package：DFN1010D-3；40 V, 600 mA NPN switching transistor

1. General description NPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PMBT2907AQA 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 40V) •

文件：242.7 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司