N-channel silicon field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low noise • Interchangeability of drain and source connections • High gain. APPLICATIONS • AM input stage in car radios • VHF amplifiers • Oscillators and mixers.

文件：98.18 Kbytes 页数：12 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N沟道硅FET

SOT23封装N沟道对称结型场效应晶体管。 高增益\n可互换的漏极和源极连接\n低噪声;

恩XP

NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Features ● Especially suitable for applications from 380 nm to 1180 nm (SFH 309) and of 880 nm (SFH 309 FA) ● High linearity ● 3 mm LED plastic package ● Available in groups Applications ● Photointerrupters ● Industrial electronics ● For control and drive circuits

文件：281.02 Kbytes 页数：6 Pages

SIEMENS

西门子

NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Features ● Especially suitable for applications from 380 nm to 1180 nm (SFH 309 P) and of 880 nm (SFH 309 PFA) ● High linearity ● 3 mm plane LED plastic package ● Available in groups Applications ● Photointerrupters ● Industrial electronics ● For control and drive circuits

文件：274.48 Kbytes 页数：5 Pages

SIEMENS

西门子

SCHOTTKY BARRIER RECTIFIERS(3.0A,70-100V)

文件：232.37 Kbytes 页数：3 Pages

MOSPEC

统懋