丝印：M3；Package：DFN1006-3；40 V, 600 mA NPN switching transistor

1. General description NPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT2907AM 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 40V) • Leadless ultra small SMD plastic package

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丝印：01100111；Package：DFN1006B-3；40 V, 600 mA NPN switching transistor

1. General description NPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT2907AMB 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 40V) • Leadless ultra small SMD plastic packa

文件：221.72 Kbytes 页数：12 Pages

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40 V, 600 mA NPN switching transistor

NPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package.\n PNP complement: PMBT2907AM • High current (max. 600 mA)\n• Low voltage (max. 40V)\n• Leadless ultra small SMD plastic package\n• Low package height of 0.50 mm\n• Power dissipation comparable to SOT23;

Nexperia

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40 V, 600 mA NPN switching transistor

NPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package.\n PNP complement: PMBT2907AMB • High current (max. 600 mA)\n• Low voltage (max. 40V)\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm\n• Power dissipation comparable to SOT23;

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Package：3-XFDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 0.6A DFN1006B-3

Nexperia USA Inc.

Package：SC-101，SOT-883；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PMBT2222AM/SOT883/XQFN3

Nexperia USA Inc.