N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. FEATURES • High-speed switching • Interchangeability of drain and source connections

文件：36.52 Kbytes 页数：6 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N-channel junction FETs Rev. 4 ??20 September 2011

General description Symmetrical N-channel junction FETs in a SOT23 package. Features and benefits ■ High-speed switching ■ Interchangeability of drain and source connections ■ Low RDSon at zero gate voltage ( Applications ■ Analog switches ■ Choppers ■ Commutators ■ Multiplexers ■ Thin

文件：87.77 Kbytes 页数：9 Pages

恩XP

N沟道FET

对称N沟道结型场效应晶体管，采用SOT23封装。 高速开关\n 可互换漏极和源极连接\n 低导通电阻;

恩XP