N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio amplifiers. FEATURES • High-speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltag

文件：36.29 Kbytes 页数：6 Pages

PHI

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General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

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N-channel FET

Overview Symmetrical N-channel junction Field-Effect Transistor in a SOT23 package. •High-speed switching\n•Interchangeable drain and source connections\n•Low on-state resistance;

恩XP

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FCC PART68 VOICE/DATA COUPLING TRANSFORMERS

文件：252.49 Kbytes 页数：9 Pages

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