N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio amplifiers. FEATURES • High-speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltag

文件：36.29 Kbytes 页数：6 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N沟道FET

不建议新设计使用\n 对称N沟道结型场效应晶体管，采用SOT23封装。 高速开关\n 可互换漏极和源极连接\n 低导通电阻;

恩XP

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

文件：752.937 Kbytes 页数：3 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 190 Volts

文件：397.49 Kbytes 页数：3 Pages

SPSEMI

瞬雷电子

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features For surface mounted applications Low profile package clamping capability cycle):0.01 High temperature soldering guaranteed: 260 ℃/10 seconds, at terminals 200W peak pulse power capability wi t h a 10/1000 μ Low incremental surge resistance, excellent s wave from,repetition rate

文件：996.76 Kbytes 页数：3 Pages

SUNMATE

森美特