N-channel silicon field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low noise • Interchangeability of drain and source connections • High gain. APPLICATIONS • AM input stage in car radios • VHF amplifiers • Oscillators and mixers.

文件：98.18 Kbytes 页数：12 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N沟道硅FET

N沟道对称结型场效应晶体管，采用SOT23封装。 高增益\n 可互换的漏极和源极连接\n 低噪声;

恩XP

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 3.0 Amperes)

VOLTAGE 20 to 60 Volts CURRENT 3.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power los

文件：61.07 Kbytes 页数：2 Pages

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS(3.0A,70-100V)

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 70 -100 VOLTS

文件：227.44 Kbytes 页数：3 Pages

MOSPEC

统懋

TRIPLE IGBT/MOS DRIVER

DESCRIPTION The TD310 is designed to drive one, two or three Power IGBT/MOS and has driving capability for pulse transformer. So it is perfectly suited to interface control IC with Power Switches in low side or half-bridge configuration. ■ THREE POWER IGBT/MOS AND PULSE TRANSFORMER D

文件：82.34 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体