N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

文件：95.15 Kbytes 页数：9 Pages

PHI

飞利浦

N-channel field-effect transistor

恩XP

恩智浦

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

文件：95.15 Kbytes 页数：9 Pages

PHI

飞利浦

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

文件：95.61 Kbytes 页数：9 Pages

PHI

飞利浦

SFET RF,VHF, UHF, Amplitiers

N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50.

文件：196.11 Kbytes 页数：2 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel JFET High Frequency Amplifier

FEATURES • Low Noise • Low Feedback Capacitance • Low Output Capacitance • High Transconductance • High Power Gain

文件：23.71 Kbytes 页数：2 Pages

Calogic