MTP10N40E

TMOSPOWERFET10AMPERES400VOLTSRDS(on)=0.55OHMS

N–ChannelEnhancement–ModeSiliconGate ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchi

MTW10N40E

TMOSE-FETPOWERFIELDEFFECTTRANSISTOR

MTW10N40E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTB10N40

N?묬hannelPowerMOSFET

10AMPERES400VOLTSRDS(on)=500mΩ Designedforhighvoltage,highspeedswitchingapplicationsinpowersupplies,converters,powermotorcontrolsandbridgecircuits. Features •HigherCurrentRating •LowerRDS(on) •LowerCapacitances •LowerTotalGateCharge •Tig

NTP10N40

N?묬hannelPowerMOSFET

10AMPERES400VOLTSRDS(on)=500mΩ Designedforhighvoltage,highspeedswitchingapplicationsinpowersupplies,converters,powermotorcontrolsandbridgecircuits. Features •HigherCurrentRating •LowerRDS(on) •LowerCapacitances •LowerTotalGateCharge •Tig

P10N40HA

N-Channel650V(D-S)MOSFET

PHB10N40

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei

PHB10N40T

N-Channel650V(D-S)MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light

PHP10N40

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PHP10N40E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP10N60Eissupplied

SIF10N40E

N-CHANNELPOWERMOSFET

SIHB10N40D

DSeriesPowerMOSFET

FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry -Lowfigure-of-merit(

SIHB10N40D

DSeriesPowerMOSFET

FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

SIHF10N40D

DSeriesPowerMOSFET

FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircui

SIHF10N40D

iscN-ChannelMOSFETTransistor

SIHP10N40D

Lowareaspecificon-resistance

FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

SIHP10N40D

iscN-ChannelMOSFETTransistor

SSFP10N40

StarMOSTPowerMOSFET

VDSS=400V ID25=10A RDS(ON)=0.53Ω Description StarMOSisanewgenerationofhighvoltageN–ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimisestheJFETeffect,increasespackingdensityandreducestheon-resistance.StarMOSalsoachievesfasterswitchingspee

SZ-10N40

TransientVoltageSuppressor

WSF10N40

N-ChMOSFET