PowerMOS transistor Isolated version of PHP2N40E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

文件：24.93 Kbytes 页数：5 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.75A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：318.26 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor Isolated version of PHP2N40E

恩XP

1 Amps, 400 Volts N-CHANNEL POWER MOSFET

文件：173.49 Kbytes 页数：4 Pages

UTC

友顺

POWER FIELD EFFECT TRANSISTOR

文件：164.85 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched

文件：60.4 Kbytes 页数：7 Pages

PHI

PHI