PowerMOS transistor Isolated version fo PHP1N50E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

文件：24.87 Kbytes 页数：5 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：318.28 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor Isolated version fo PHP1N50E

恩XP

520V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：600.21 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

520V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：634.92 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

520V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：600.21 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体