N-channel TrenchMOS-TM standard level FET

Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Isolated package. Applications ■ DC-to-DC converters ■ Switched-mode power supplies.

文件：90.9 Kbytes 页数：12 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 110V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.23 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100-V (D-S) MOSFET

文件：2.17776 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel TrenchMOS™ standard level FET

Description\nN-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology. ■ Low on-state resistance\n■ Isolated package.Applications\n■ DC-to-DC converters\n■ Switched-mode power supplies. ;

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