PHX45NQ11T

N-channel TrenchMOS standard level FET

Description N-channelenhancementmodefield-effecttransistorinafullyisolatedencapsulatedplasticpackageusingTrenchMOS™technology. Features ■Lowon-stateresistance ■Isolatedpackage. Applications ■DC-to-DCconverters ■Switched-modepowersupplies.

PHX45NQ11T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=30.4A@TC=25℃ ·DrainSourceVoltage-VDSS=110V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHP45NQ11T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=47A@TC=25℃ ·DrainSourceVoltage-VDSS=105V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHP45NQ11T

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L