N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Isolated package. Applications ■ DC-to-DC converters ■ Switched-mode power supplies.

文件：93.68 Kbytes 页数：12 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 110V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.81 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

恩XP

恩智浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 47A@ TC=25℃ ·Drain Source Voltage -VDSS= 105V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.16 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits L

文件：855.92 Kbytes 页数：12 Pages

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