isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：322.21 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS E-FET POWER FIELD EFFECT TRANSISTOR

文件：70.14 Kbytes 页数：2 Pages

Motorola

摩托罗拉

TMOS E-FET POWER FIELD EFFECT TRANSISTOR

恩XP

N?묬hannel Power MOSFET

10 AMPERES 400 VOLTS RDS(on) = 500 mΩ Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tig

文件：148.24 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.53 Kbytes 页数：2 Pages

ISC

无锡固电

N?묬hannel Power MOSFET

10 AMPERES 400 VOLTS RDS(on) = 500 mΩ Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tig

文件：148.24 Kbytes 页数：4 Pages

ONSEMI

安森美半导体