N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching ■ Isolated mounting base ■ Low thermal resistance Applications ■ DC-to-DC converters ■ Switched-mode

文件：94.73 Kbytes 页数：12 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

恩XP

N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching ■ Isolated mounting base ■ Low thermal resistance Applications ■ DC-to-DC converters ■ Switched-mode

文件：94.73 Kbytes 页数：12 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 110V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.01 Kbytes 页数：2 Pages

ISC

无锡固电