PHX18NQ11T

N-channel TrenchMOS standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinafullyisolatedplasticpackageusingTrenchMOS™technology. Features ■Lowon-stateresistance ■Fastswitching ■Isolatedmountingbase ■Lowthermalresistance Applications ■DC-to-DCconverters ■Switched-mode

PHX18NQ11T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12.5A@TC=25℃ ·DrainSourceVoltage-VDSS=110V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=90mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHP18NQ11T

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits H

PHP18NQ11T

iscN-ChannelMOSFETTransistor

·DESCRIPTION ·DrainCurrentID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=110V(Min) ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·APPLICATIONS ·Generalpurposepoweramplifier

PHP18NQ11T

TrenchMOSstandardlevelFET

PHX18NQ11

N-channelTrenchMOSstandardlevelFET

Description N-channelenhancementmodefield-effectpowertransistorinafullyisolatedplasticpackageusingTrenchMOS™technology. Features ■Lowon-stateresistance ■Fastswitching ■Isolatedmountingbase ■Lowthermalresistance Applications ■DC-to-DCconverters ■Switched-mode