N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHX14NQ20T is supplie

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PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=7.6A@ TC=25℃ · Drain Source Voltage -VDSS=200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 230mΩ(Max)@VGS= 10V DESCRIPTION · DC to DC converters ·General purpose switching applications

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ISC

无锡固电

MOSFET N-CH 200V 7.6A TO220F

恩XP

恩智浦

TrenchMOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP14NQ20T in SOT78 (TO-220AB) PHB14NQ20T in SOT404 (D2-PAK) PHD14NQ20T in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching

文件：64.95 Kbytes 页数：10 Pages

PHI

飞利浦

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP14NQ20T in SOT78 (TO-220AB) PHB14NQ20T in SOT404 (D2-PAK) PHD14NQ20T in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching

文件：269.78 Kbytes 页数：14 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：344.96 Kbytes 页数：2 Pages

ISC

无锡固电