N-Ch MOSFET

文件：1.56695 Mbytes 页数：5 Pages

WIINSOK

微硕半导体

高压场效应管（100-800V）

Winsok

微硕半导体

TMOS POWER FET 10 AMPERES

文件：273.15 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switchi

文件：249.4 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

文件：69.81 Kbytes 页数：7 Pages

PHI

PHI