TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switchi

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TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switchi

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TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

N–Channel Enhancement–Mode Silicon Gate\nThis advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching a

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