TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

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PHI

PHI

TrenchMOS transistor Standard level FET

恩XP

DIP

KEMETKEMET Corporation

基美

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模块

AMI

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con

NEXPERIA

安世

上传：北京天阳诚业科贸有限公司