Complementary enhancement mode MOS transistors

DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown. APPLICATIONS • Universal line interface in telephone sets • Relay, high-speed and line transfo

文件：157.35 Kbytes 页数：16 Pages

PHI

飞利浦

Complementary enhancement mode MOS transistors

1.1 General description One N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Suitable for high fr

文件：934.71 Kbytes 页数：14 Pages

NEXPERIA

安世

PHC2300 - Complementary enhancement mode MOS transistors

Complementary enhancement mode MOS transistors - One N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ·Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世

N-Channel MOSFET

文件：1.94138 Mbytes 页数：6 Pages

PJSEMI

平晶半导体

N-Channel MOSFET

文件：1.10132 Mbytes 页数：6 Pages

PJSEMI

平晶半导体

BOOST High PF Low THD CC Driver

FEATURE High PF or low THD Ultra-wide working voltage High voltage start start-up and power supply Inductive peak current elimination technology QR and MOSFET driver technology Closed-loop constant current control technology Single winding inductor Programmable output o pen-circuit rote

文件：1.19749 Mbytes 页数：7 Pages

SY

顺烨电子